Customization: | Available |
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Shape: | DIP/SMD |
Conductive Type: | N/a |
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Product Status
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Active
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FET Type
|
P-Channel
|
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Technology
|
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
|
20 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
4A (Ta)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
1.5V, 4.5V
|
|
Rds On (Max) @ Id, Vgs
|
40.7mOhm @ 3A, 4.5V
|
|
Vgs(th) (Max) @ Id
|
1V @ 1mA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
14.1 nC @ 4.5 V
|
|
Vgs (Max)
|
±8V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
970 pF @ 10 V
|
|
FET Feature
|
-
|
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Power Dissipation (Max)
|
500mW (Ta)
|
|
Operating Temperature
|
150°C (TJ)
|
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Mounting Type
|
Surface Mount
|
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Supplier Device Package
|
ES6
|
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Package / Case
|
SOT-563, SOT-666
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Base Product Number
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SSM6J212
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