Original Mjd45h11t4g Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W

• Customization: Available
• Certification: RoHS
• Encapsulation Structure: Chip Transistor
• Model NO.: MJD45H11T4G
• Installation: SMD Triode
• Transistor Type: PNP
• Current - Collector (IC) (Max): 8 a
• Voltage - Collector Emitter Breakdown (M: 80 V
• Vce Saturation (Max) @ Ib, IC: 1V @ 400mA, 8A
• Current - Collector Cutoff (Max): 1µa
• DC Current Gain (Hfe) (Min) @ IC, Vce: 40 @ 4A, 1V
• Power - Max: 1.75 W
• Frequency - Transition: 90MHz
• Transport Package: Standard
• Specification: Standard
• Origin: Original
• Package Size: 10.00cm * 10.00cm * 10.00cm
• Package Gross Weight: 1.000kg

Product Description

Original MJD45H11T4G Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W

Type	Description
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V
Power - Max	1.75 W
Frequency - Transition	90MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Base Product Number	MJD45

 

 

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