Customization: | Available |
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Shape: | DIP/SMD |
Conductive Type: | N/a |
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Payment Methods: |
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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60 V
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Current - Continuous Drain (Id) @ 25°C
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25A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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30mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id
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2.2V @ 8µA
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Gate Charge (Qg) (Max) @ Vgs
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16.3 nC @ 10 V
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Vgs (Max)
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±16V
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Input Capacitance (Ciss) (Max) @ Vds
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1220 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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29W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TO252-3-11
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IPD25N06
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