Customization: | Available |
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Certification: | RoHS |
Encapsulation Structure: | Chip Transistor |
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TYPE
|
DESCRIPTION
|
---|---|
Category
|
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
|
Series
|
HEXFET®
|
Packaging
|
Tape & Reel (TR)
Cut Tape (CT)
|
Part Status
|
Active
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
100 V
|
Current - Continuous Drain (Id) @ 25°C
|
5.7A (Ta), 25A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
35mOhm @ 5.7A, 10V
|
Vgs(th) (Max) @ Id
|
4.9V @ 50µA
|
Gate Charge (Qg) (Max) @ Vgs
|
20 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
890 pF @ 25 V
|
Power Dissipation (Max)
|
2.2W (Ta), 42W (Tc)
|
Operating Temperature
|
-40°C ~ 150°C (TJ)
|
Mounting Type
|
Surface Mount
|
Supplier Device Package
|
DIRECTFET™ SJ
|
Package / Case
|
DirectFET™ Isometric SJ
|
Base Product Number
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IRF6645
|