Customization: | Available |
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Certification: | ISO |
Encapsulation Structure: | Chip Transistor |
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TYPE
|
DESCRIPTION
|
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Category
|
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
|
Mfr
|
International Rectifier
|
Series
|
HEXFET®
|
Package
|
Bulk
|
Product Status
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Active
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FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
200 V
|
Current - Continuous Drain (Id) @ 25°C
|
18A (Tc)
|
Rds On (Max) @ Id, Vgs
|
150mOhm @ 11A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
67 nC @ 10 V
|
Vgs (Max)
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±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
1160 pF @ 25 V
|
Power Dissipation (Max)
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150W (Tc)
|
Operating Temperature
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-55°C ~ 175°C (TJ)
|
Mounting Type
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Surface Mount
|
Supplier Device Package
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D2PAK
|
Package / Case
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|