Trans Mosfet N-CH 900V 9A 3-Pin (3+Tab) to-3pn

• Customization: Available
• Certification: ISO
• Shape: DIP
• Model NO.: TK9J90E, S1E
• Cooling Method: Air Cooled Tube
• Function: High Back Pressure Transistor, N/a
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Plastic Sealed Transistor
• Power Level: High Power
• Material: Silicon
• Package: Tube
• Product Status: Active
• Fet Type: N-Channel
• Drain to Source Voltage (Vdss): 900 V
• Transport Package: N/a
• Specification: DIP/SMD
• Trademark: N/A
• Origin: Original
• Package Size: 10.00cm * 10.00cm * 10.00cm
• Package Gross Weight: 0.100kg

Product Description

Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN 

TYPE	DESCRIPTION	SELECT
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TK9J90

 

 

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