Customization: | Available |
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Shape: | DIP/SMD |
Conductive Type: | N/a |
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Package
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Bulk
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Part Status
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Obsolete
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
|
30 V
|
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Current - Continuous Drain (Id) @ 25°C
|
9.7A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
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Rds On (Max) @ Id, Vgs
|
20mOhm @ 9.7A, 10V
|
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Vgs(th) (Max) @ Id
|
2.7V @ 250µA
|
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Gate Charge (Qg) (Max) @ Vgs
|
32 nC @ 10 V
|
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Vgs (Max)
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±20V
|
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Input Capacitance (Ciss) (Max) @ Vds
|
1900 pF @ 15 V
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FET Feature
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-
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Power Dissipation (Max)
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3.1W (Ta)
|
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
|
Surface Mount
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Supplier Device Package
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8-SOIC
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Package / Case
|
8-SOIC (0.154", 3.90mm Width)
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