Customization: | Available |
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Shape: | DIP/SMD |
Conductive Type: | N/a |
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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|
Drain to Source Voltage (Vdss)
|
200 V
|
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Current - Continuous Drain (Id) @ 25°C
|
88A (Tc)
|
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Drive Voltage (Max Rds On, Min Rds On)
|
10V
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|
Rds On (Max) @ Id, Vgs
|
10.7mOhm @ 88A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 270µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
87 nC @ 10 V
|
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Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
7100 pF @ 100 V
|
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FET Feature
|
-
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Power Dissipation (Max)
|
300W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
|
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Mounting Type
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Surface Mount
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Supplier Device Package
|
PG-TO263-3
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Package / Case
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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Product Number
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IPB107
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