Customization: | Available |
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Shape: | DIP/SMD |
Conductive Type: | N/a |
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
|
800 V
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Current - Continuous Drain (Id) @ 25°C
|
2A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
|
10V
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Rds On (Max) @ Id, Vgs
|
2.7Ohm @ 1.2A, 10V
|
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Vgs(th) (Max) @ Id
|
3.9V @ 250µA
|
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Gate Charge (Qg) (Max) @ Vgs
|
1.5 nC @ 10 V
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Vgs (Max)
|
±20V
|
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Input Capacitance (Ciss) (Max) @ Vds
|
290 pF @ 100 V
|
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FET Feature
|
-
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Power Dissipation (Max)
|
42W (Tc)
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D-Pak
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IPD80R2
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