Original Mosfet Irfsl3306pbf N-Channel 60 V 120A 230W Through Hole to-262 Irfsl3306

• Certification: ISO
• Encapsulation Structure: Chip Transistor
• Installation: SMD Triode
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: IRFSL3306PBF
• Working Frequency: Overclocking
• Power Level: High Power
• Function: Power Triode
• Structure: Diffusion
• Material: Germanium
• Package: Tray
• Product Status: Active
• Fet Type: N-Channel
• Technology: Mosfet (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Vgs (Max): ±20V
• Input Capacitance (CISS) (Max) @ Vds: 4520 PF @ 50 V
• Power Dissipation (Max): 230W (Tc)
• Operating Temperature: -55°c ~ 175°c (Tj)
• Transport Package: N/a
• Specification: SMD
• Trademark: N/A
• Origin: Original
• Package Size: 10.00cm * 10.00cm * 10.00cm
• Package Gross Weight: 0.100kg

Product Description

Original MOSFET IRFSL3306PBF N-Channel 60 V 120A  230W  Through Hole TO-262 IRFSL3306

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	International Rectifier
Series	HEXFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4520 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 

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We provide turnkey solutions including R&D, PCB fabrication, SMT, testing, and other value-added services.

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